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BUY STW15NK90Z https://www.utsource.net/itm/p/11547202.html
Description: STW15NK90Z is a N-channel MOSFET transistor manufactured by STMicroelectronics.
Description: STW15NK90Z is a N-channel MOSFET transistor manufactured by STMicroelectronics.
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BUY TTA1943/TTC5200 https://www.utsource.net/itm/p/11547184.html
Parameter TTA1943 TTC5200 Type Audio Codec Audio Codec Channels 2 2 Sampling Rate (kHz) 8 - 192 8 - 192 SNR (dB) 105 105 THD+N (%) 0.0008 0.0008 Power Supply (V) 1.8 - 3.6 1.8 - 3.
Parameter TTA1943 TTC5200 Type Audio Codec Audio Codec Channels 2 2 Sampling Rate (kHz) 8 - 192 8 - 192 SNR (dB) 105 105 THD+N (%) 0.0008 0.0008 Power Supply (V) 1.8 - 3.6 1.8 - 3.
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BUY L7824CV L7824 TO-220 ST https://www.utsource.net/itm/p/11547140.html
Parameter Symbol Min Typ Max Unit Input Voltage VIN 27 - 40 V Output Voltage VOUT 24 24 24 V Output Current IOUT - 1.5 1.5 A Quiescent Current IQ - 6.5 - mA Dropout Voltage VDROPOUT - 2.
Parameter Symbol Min Typ Max Unit Input Voltage VIN 27 - 40 V Output Voltage VOUT 24 24 24 V Output Current IOUT - 1.5 1.5 A Quiescent Current IQ - 6.5 - mA Dropout Voltage VDROPOUT - 2.
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BUY L7915CV L7915 TO-220 ST https://www.utsource.net/itm/p/11547136.html
Parameter Symbol Min Typical Max Unit Output Voltage Vout - 15 - V Input Voltage Range Vin 16.5 - 35 V Output Current (Max) Iout - - 1.5 A Dropout Voltage Vdo - 1.8 - V Quiescent Current Iq - 4.
Parameter Symbol Min Typical Max Unit Output Voltage Vout - 15 - V Input Voltage Range Vin 16.5 - 35 V Output Current (Max) Iout - - 1.5 A Dropout Voltage Vdo - 1.8 - V Quiescent Current Iq - 4.
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BUY TIP147TU https://www.utsource.net/itm/p/11547125.html
Parameter Symbol Min Typ Max Unit Notes Collector-Emitter Voltage VCEO - - 100 V Maximum voltage between collector and emitter with the base open. Emitter-Collector Voltage VEBO - - 5 V Maximum voltage between emitter and base with the collector open.
Parameter Symbol Min Typ Max Unit Notes Collector-Emitter Voltage VCEO - - 100 V Maximum voltage between collector and emitter with the base open. Emitter-Collector Voltage VEBO - - 5 V Maximum voltage between emitter and base with the collector open.
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BUY NJW1302G NJW3281G https://www.utsource.net/itm/p/11547122.html
Parameter NJW1302G NJW3281G Type DC-DC Converter DC-DC Converter Input Voltage Range (VIN) 2.7V to 5.5V 2.7V to 5.5V Output Voltage (VOUT) 1.8V, 2.5V, 3.0V, 3.3V 1.8V, 2.5V, 3.0V, 3.3V Output Current (IOUT) 300mA 600mA Switching Frequency (fSW) 1.2MHz 1.
Parameter NJW1302G NJW3281G Type DC-DC Converter DC-DC Converter Input Voltage Range (VIN) 2.7V to 5.5V 2.7V to 5.5V Output Voltage (VOUT) 1.8V, 2.5V, 3.0V, 3.3V 1.8V, 2.5V, 3.0V, 3.3V Output Current (IOUT) 300mA 600mA Switching Frequency (fSW) 1.2MHz 1.
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BUY 2SA1186/2SC2837 https://www.utsource.net/itm/p/11547120.html
2SA1186/2SC2837 is a pair of PNP/NPN silicon transistors manufactured by Sanken. They are designed for use in audio and general purpose applications. Description: The 2SA1186/2SC2837 is a PNP/NPN silicon transistor pair in a TO-3P package.
2SA1186/2SC2837 is a pair of PNP/NPN silicon transistors manufactured by Sanken. They are designed for use in audio and general purpose applications. Description: The 2SA1186/2SC2837 is a PNP/NPN silicon transistor pair in a TO-3P package.
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BUY 1N4742A https://www.utsource.net/itm/p/11546443.html
1N4742A is a 1W Zener diode with a voltage rating of 6.2V. It is a DO-41 package, with a maximum power dissipation of 500mW. It is used in voltage regulation, surge suppression, and reverse polarity protection. It is also used in voltage reference circuits, overvoltage protection circuits, and voltage clamping circuits.
1N4742A is a 1W Zener diode with a voltage rating of 6.2V. It is a DO-41 package, with a maximum power dissipation of 500mW. It is used in voltage regulation, surge suppression, and reverse polarity protection. It is also used in voltage reference circuits, overvoltage protection circuits, and voltage clamping circuits.
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BUY HY4008W https://www.utsource.net/itm/p/11546437.html
Description: HY4008W is a high-performance 8-bit microcontroller designed by Holtek. It is based on the 8051 core architecture and has a maximum operating frequency of 40MHz.
Description: HY4008W is a high-performance 8-bit microcontroller designed by Holtek. It is based on the 8051 core architecture and has a maximum operating frequency of 40MHz.
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BUY GT45F122 https://www.utsource.net/itm/p/11546434.html
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.7 - 5.
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.7 - 5.
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BUY TGAN60N60F2DS https://www.utsource.net/itm/p/11546428.html
Description: The TGAN60N60F2DS is a N-channel enhancement mode power MOSFET with a low gate charge and low on-resistance.
Description: The TGAN60N60F2DS is a N-channel enhancement mode power MOSFET with a low gate charge and low on-resistance.
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BUY FGH60N60SFD 60N60 60A600V https://www.utsource.net/itm/p/11546423.
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BUY STF17NF25 https://www.utsource.net/itm/p/11546391.html
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - - 250 V - Gate-Source Voltage VGS -15 - 15 V - Continuous Drain Current ID - - 17 A TC = 25°C Continuous Drain Current ID - - 13.
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - - 250 V - Gate-Source Voltage VGS -15 - 15 V - Continuous Drain Current ID - - 17 A TC = 25°C Continuous Drain Current ID - - 13.
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BUY 8N60L-B-TF2-T https://www.utsource.net/itm/p/11546330.html
Parameter Symbol Min Typ Max Unit Notes Breakdown Voltage V(BR)DSS - 600 - V Drain-Source On-State Resistance RDS(on) - 1.3 - Ω @ 25°C, VGS = 10V Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V @ ID = 250 μA, VDS = 10V Continuous Drain Current ID - 8.
Parameter Symbol Min Typ Max Unit Notes Breakdown Voltage V(BR)DSS - 600 - V Drain-Source On-State Resistance RDS(on) - 1.3 - Ω @ 25°C, VGS = 10V Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V @ ID = 250 μA, VDS = 10V Continuous Drain Current ID - 8.
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BUY IRG4PC50UPBF https://www.utsource.net/itm/p/11546292.html
Parameter Symbol Min Typical Max Unit Conditions Maximum Drain-Source Voltage VDS - 500 - V Maximum Gate-Source Voltage VGS -20 - 20 V Continuous Drain Current (TC = 25°C) ID - 16 - A Continuous Drain Current (TC = 100°C) ID - 9.
Parameter Symbol Min Typical Max Unit Conditions Maximum Drain-Source Voltage VDS - 500 - V Maximum Gate-Source Voltage VGS -20 - 20 V Continuous Drain Current (TC = 25°C) ID - 16 - A Continuous Drain Current (TC = 100°C) ID - 9.
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BUY BTA12-800BW https://www.utsource.net/itm/p/11546273.html
Description: The BTA12-800BW is a TRIAC from STMicroelectronics. It is a three-terminal bidirectional device that is used to control the current in an AC circuit.
Description: The BTA12-800BW is a TRIAC from STMicroelectronics. It is a three-terminal bidirectional device that is used to control the current in an AC circuit.
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BUY 1N5342B https://www.utsource.net/itm/p/11546110.html
Parameter Symbol Min Typ Max Unit Peak Inverse Voltage VR(SM) - 300 - V Average Rectified Current (TA = 75°C) IF(AV) - 5.0 - A Peak Surge Current (Non-Repetitive, Tj = 25°C) ISM - 200 - A Forward Voltage (IF = 5.0A) VF - 1.
Parameter Symbol Min Typ Max Unit Peak Inverse Voltage VR(SM) - 300 - V Average Rectified Current (TA = 75°C) IF(AV) - 5.0 - A Peak Surge Current (Non-Repetitive, Tj = 25°C) ISM - 200 - A Forward Voltage (IF = 5.0A) VF - 1.
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