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Specifications
SKU: 11839593
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(DS) | - | - | 55 | V | |
| Gate-Source Voltage | V(GS) | -10 | - | 20 | V | |
| Continuous Drain Current | I(D) | - | - | 30 | A | TC = 25°C |
| Pulse Drain Current | I(D pul) | - | - | 90 | A | t(p) = 10 μs, I(G) = 10 mA |
| Power Dissipation | P(TOT) | - | - | 80 | W | TC = 25°C |
| Junction Temperature | T(J) | - | - | 175 | °C | |
| Storage Temperature | T(STG) | -65 | - | 150 | °C |
Instructions for Use:
- Handling Precautions: The IRFP4332PBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
- Mounting: Ensure good thermal contact with the heat sink to maintain optimal operating temperatures. Use thermally conductive paste or a similar material between the device and the heat sink.
- Biasing: Properly bias the gate-source voltage to avoid exceeding the maximum ratings. Keep V(GS) within the specified limits to prevent damage.
- Current Limitation: Do not exceed the continuous or pulse drain current ratings. For pulse applications, ensure the duty cycle does not lead to excessive power dissipation.
- Thermal Management: Monitor the junction temperature to stay below the maximum limit of 175°C. Exceeding this can cause permanent damage.
- Storage: Store in a dry environment within the specified storage temperature range to avoid damage from moisture or extreme temperatures.
For detailed specifications and further information, refer to the manufacturer's datasheet.
(For reference only)Inquiry - IRFP4332PBF
