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Specifications
SKU: 11541422
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A | - | 0.075 | - | Ω |
| Gate Threshold Voltage | VGS(th) | ID = 250μA | 2.0 | - | 4.0 | V |
| Continuous Drain Current | ID | TC = 25°C | - | 39 | - | A |
| TC = 75°C | - | 26 | - | A | ||
| Pulse Drain Current | IDP | t = 10ms, Duty = 1% | - | 120 | - | A |
| Total Power Dissipation | PD | TC = 25°C | - | 210 | - | W |
| TC = 75°C | - | 130 | - | W | ||
| Junction Temperature | TJ | - | - | - | 150 | °C |
| Storage Temperature | TSTG | - | -55 | - | 150 | °C |
Instructions for Use:
Handling and Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid static discharge which can damage the MOSFET.
Installation:
- Ensure proper heat sinking if operating near maximum current or power dissipation limits.
- Follow good soldering practices to avoid thermal shock to the device.
Operation:
- Operate within specified temperature ranges to ensure reliable performance.
- Keep gate-source voltage (VGS) within safe limits to prevent gate oxide breakdown.
- Avoid exceeding the maximum drain-source voltage (VDS(max)) as it can lead to device failure.
Testing:
- During testing, ensure that all parameters are within the specified limits provided in the table.
- Use appropriate test equipment that does not exceed the device ratings.
Safety Considerations:
- Always use protective equipment when handling electrical components.
- Disconnect power sources before making any changes to the circuit.
Inquiry - IRF3500
