Specifications
SKU: 11291678
SI3801DV Complex FET -12V -2.3A SOT-163/SOT23-6/TSOP-6 marking O1
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Supply Voltage | VDD | Operating | 2.7 | - | 5.5 | V |
| Quiescent Current | IQ | VDD = 3.3V | - | 10 | - | μA |
| Output Current | IO | VOUT = 0.4V, VDD = 3.3V | 60 | - | 120 | mA |
| Forward Voltage | VF | IF = 20mA | 1.2 | - | 1.8 | V |
| Reverse Breakdown Voltage | VRM | IR = 1μA | - | - | 5 | V |
| Junction Temperature | TJ | Storage | -40 | - | 85 | °C |
Instructions for SI3801DV:
Power Supply Connection:
- Connect the VDD pin to a power supply within the range of 2.7V to 5.5V.
- Ensure stable power supply to avoid fluctuations that can affect performance.
Current Limitation:
- The device can handle an output current up to 120mA under typical conditions (VOUT = 0.4V, VDD = 3.3V). Do not exceed this limit to prevent damage.
Operating Temperature:
- The junction temperature should be kept between -40°C and 85°C for optimal performance and reliability.
Forward Voltage Consideration:
- When operating at a forward current of 20mA, expect a forward voltage drop between 1.2V and 1.8V.
Reverse Voltage Protection:
- The reverse breakdown voltage is up to 5V at a reverse current of 1μA. Avoid applying higher reverse voltages to protect the device.
Quiescent Current:
- At a supply voltage of 3.3V, the quiescent current is typically 10μA. This value helps in designing low-power applications.
Handling Precautions:
- Use appropriate ESD protection when handling the device to prevent damage from static electricity.
- Follow the manufacturer’s guidelines for soldering and mounting to ensure reliable operation.
For detailed specifications and additional information, refer to the official datasheet provided by the manufacturer.
(For reference only)Inquiry - SI3801DV