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Specifications
SKU: 11229602
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source On Resistance | RDS(on) | - | 0.175 | - | Ω | VGS = 10V, ID = 20A |
| Gate Charge | QG | - | 94 | - | nC | VGS = 10V |
| Input Capacitance | Ciss | - | 1640 | - | pF | VDS = 15V |
| Output Capacitance | Coss | - | 320 | - | pF | VDS = 15V |
| Total Gate Charge | QG | - | 94 | - | nC | VGS = 10V |
| Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 1mA |
| Continuous Drain Current | ID | - | 22 | - | A | Tc = 25°C |
| Pulse Drain Current | IDM | - | 88 | - | A | tp = 10ms |
| Power Dissipation | PD | - | - | 200 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C |
Instructions for Use:
- Operating Conditions: Ensure that the operating conditions (temperature, voltage, and current) do not exceed the maximum ratings provided in the table.
- Mounting: For optimal performance, mount the device on a suitable heat sink to manage heat dissipation effectively.
- Gate Drive: Apply sufficient gate voltage (typically 10V) to ensure low RDS(on). Avoid exceeding the threshold voltage to prevent unintended operation.
- Storage: Store in a dry, cool environment to prevent damage from moisture or extreme temperatures.
- Handling: Handle with care to avoid mechanical damage or electrostatic discharge (ESD), which can harm the semiconductor junctions.
For detailed application notes and further technical support, refer to the manufacturer's datasheet or website.
(For reference only)Inquiry - SIHP22N60E
