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K4B2G1646E-BCK0

Specifications

SKU: 8149228

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Parameter Description
Device Name K4B2G1646E-BCK0
Type DDR3 SDRAM
Density 2 Gb (256M x 8)
Package BGA (FBGA)
Voltage (Vcc) 1.35V
Speed 1600 Mbps
CAS Latency (CL) 11
Operating Temperature -40°C to +85°C
Data Width 8-bit
Bank Address Bits 3
Row Address Bits 15
Column Address Bits 10
Supply Voltage Range VCC = 1.35V ± 0.135V
Refresh Rate 8K refresh cycles per 64ms
Self-Refresh Exit Time 70ns
Power Down Exit Time 70ns

Instructions for Use

  1. Power Supply: Ensure the supply voltage is set to 1.35V with a tolerance of ±0.135V.
  2. Initialization: After power-up, perform a reset and initialization sequence as specified in the JEDEC DDR3 standard.
  3. Refresh: Implement an 8K refresh cycle every 64 milliseconds to maintain data integrity.
  4. Timing Parameters: Adhere strictly to the timing parameters provided in the datasheet, especially for CAS latency and command intervals.
  5. Thermal Management: Operate within the temperature range of -40°C to +85°C. Consider heat sinks or cooling solutions if operating near the upper limit.
  6. Signal Integrity: Maintain proper signal integrity by following guidelines for PCB layout and termination resistors.
  7. Configuration: Configure the device according to your system's requirements using mode register settings.

For detailed information on specific operations and advanced configurations, refer to the full datasheet available from the manufacturer.

(For reference only)

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