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Specifications
SKU: 8148862
| Parameter | Description |
|---|---|
| Product Name | H27U1G8F2CTR-BC |
| Manufacturer | Hynix Semiconductor Inc. |
| Type | SDRAM |
| Density | 1 Gb (128Mb x 8) |
| Organization | 16M x 64 x 4 banks |
| Voltage Supply | Vdd = 2.5V ± 0.1V, Vddq = 2.5V ± 0.1V |
| Operating Temperature Range | -40°C to +85°C |
| Package Type | BGA (Ball Grid Array) |
| Pin Count | 60 |
| CAS Latency | CL=2 |
| Access Time | tRCD = 20 ns, tRP = 20 ns |
| Cycle Time | tRC = 45 ns |
| Refresh Rate | 8K refresh cycles per 64ms |
Instructions for Use:
- Power Supply Requirements: Ensure that the power supply voltage (Vdd and Vddq) is set to 2.5V ± 0.1V.
- Temperature Considerations: The device operates reliably within a temperature range of -40°C to +85°C.
- Installation: Install in a standard BGA socket or directly solder onto the PCB as per the manufacturer’s guidelines.
- Initialization: Upon powering up, initialize the SDRAM with the appropriate command sequence according to the JEDEC standard.
- Refresh Commands: Issue refresh commands every 64ms to maintain data integrity.
- Timing Parameters: Adhere strictly to the specified timing parameters (tRCD, tRP, tRC) to ensure reliable operation.
- Signal Integrity: Pay attention to signal integrity by using proper PCB layout techniques, especially for high-speed signals.
- Handling Precautions: Handle the component with care to avoid damage from electrostatic discharge (ESD).
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