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IRFP4468PBF

Specifications

SKU: 8045637

BUY IRFP4468PBF https://www.utsource.net/itm/p/8045637.html

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage V(DS) - - 200 V
Gate-Source Voltage V(GS) - - ±20 V
Continuous Drain Current I(D) V(DS) = 25V, Tc = 25°C 18 - - A
Pulse Drain Current I(D pul) t(on) = 10ms, Duty Cycle ≤ 3% 45 - - A
Total Dissipation P(TOT) TC = 25°C - - 160 W
Junction Temperature T(j) - - 175 °C
Storage Temperature T(stg) -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings provided in the table to prevent damage to the device.
    • Ensure proper heat sinking when operating at high current or power levels.
  2. Mounting:

    • Use recommended mounting torque on screws to ensure good thermal contact and electrical connection.
    • Ensure that the mounting surface is flat and clean to maximize thermal conductivity.
  3. Biasing and Drive:

    • Apply gate voltage within the specified limits to avoid gate oxide damage.
    • Ensure that the gate drive circuitry can supply sufficient current during switching transitions.
  4. Switching Characteristics:

    • Be aware of the device’s turn-on and turn-off times under different conditions to optimize performance in your application.
    • Consider using a snubber network if high di/dt creates excessive noise or voltage spikes.
  5. Storage and Handling:

    • Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
    • Follow anti-static precautions when handling the device.
  6. Environmental Considerations:

    • Operate within the specified temperature range to ensure reliable operation.
    • Avoid exposing the device to corrosive environments which could degrade its performance.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)

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