Specifications
SKU: 8045637
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(DS) | - | - | 200 | V | |
| Gate-Source Voltage | V(GS) | - | - | ±20 | V | |
| Continuous Drain Current | I(D) | V(DS) = 25V, Tc = 25°C | 18 | - | - | A |
| Pulse Drain Current | I(D pul) | t(on) = 10ms, Duty Cycle ≤ 3% | 45 | - | - | A |
| Total Dissipation | P(TOT) | TC = 25°C | - | - | 160 | W |
| Junction Temperature | T(j) | - | - | 175 | °C | |
| Storage Temperature | T(stg) | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings provided in the table to prevent damage to the device.
- Ensure proper heat sinking when operating at high current or power levels.
Mounting:
- Use recommended mounting torque on screws to ensure good thermal contact and electrical connection.
- Ensure that the mounting surface is flat and clean to maximize thermal conductivity.
Biasing and Drive:
- Apply gate voltage within the specified limits to avoid gate oxide damage.
- Ensure that the gate drive circuitry can supply sufficient current during switching transitions.
Switching Characteristics:
- Be aware of the device’s turn-on and turn-off times under different conditions to optimize performance in your application.
- Consider using a snubber network if high di/dt creates excessive noise or voltage spikes.
Storage and Handling:
- Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
- Follow anti-static precautions when handling the device.
Environmental Considerations:
- Operate within the specified temperature range to ensure reliable operation.
- Avoid exposing the device to corrosive environments which could degrade its performance.
For detailed specifications and additional information, refer to the manufacturer's datasheet.
(For reference only)Inquiry - IRFP4468PBF