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STGW45HF60WD

Specifications

SKU: 8044496

BUY STGW45HF60WD https://www.utsource.net/itm/p/8044496.html

Parameter Symbol Conditions Min Typ Max Unit
Breakdown Voltage V(BR)DSS - 600 - V
Forward Transconductance gfs VGS = 4V, ID = 12.5A - 28 - S
Input Capacitance Ciss VDS = 30V, f = 1MHz - 1470 - pF
Output Capacitance Coss VDS = 30V, f = 1MHz - 195 - pF
Total Gate Charge Qg VGS = ±15V, ID = 12.5A - 90 - nC
On-State Resistance RDS(on) VGS = 10V, ID = 12.5A - 45 - mΩ

Instructions for Use:

  1. Installation:

    • Ensure the device is handled with care to avoid damage to the leads and body.
    • Mount the device on a suitable heatsink if necessary to dissipate heat effectively.
  2. Biasing:

    • Apply gate-source voltage (VGS) within the specified limits to control the device operation.
    • Ensure the gate drive circuit can supply sufficient current to charge and discharge the gate capacitance quickly.
  3. Operation:

    • Operate the device within the maximum ratings provided in the parameter table.
    • Keep junction temperature (TJ) within operational limits by adequate cooling.
  4. Storage:

    • Store in a dry place away from moisture and corrosive substances.
    • Handle with ESD precautions to prevent damage.
  5. Testing:

    • Perform initial testing under controlled conditions to verify parameters such as V(BR)DSS, RDS(on), and gate charge.
    • Regularly inspect for signs of wear or damage.

For detailed specifications and more comprehensive guidelines, refer to the official datasheet provided by STMicroelectronics.

(For reference only)

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