Specifications
SKU: 8044496
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Breakdown Voltage | V(BR)DSS | - | 600 | - | V | |
| Forward Transconductance | gfs | VGS = 4V, ID = 12.5A | - | 28 | - | S |
| Input Capacitance | Ciss | VDS = 30V, f = 1MHz | - | 1470 | - | pF |
| Output Capacitance | Coss | VDS = 30V, f = 1MHz | - | 195 | - | pF |
| Total Gate Charge | Qg | VGS = ±15V, ID = 12.5A | - | 90 | - | nC |
| On-State Resistance | RDS(on) | VGS = 10V, ID = 12.5A | - | 45 | - | mΩ |
Instructions for Use:
Installation:
- Ensure the device is handled with care to avoid damage to the leads and body.
- Mount the device on a suitable heatsink if necessary to dissipate heat effectively.
Biasing:
- Apply gate-source voltage (VGS) within the specified limits to control the device operation.
- Ensure the gate drive circuit can supply sufficient current to charge and discharge the gate capacitance quickly.
Operation:
- Operate the device within the maximum ratings provided in the parameter table.
- Keep junction temperature (TJ) within operational limits by adequate cooling.
Storage:
- Store in a dry place away from moisture and corrosive substances.
- Handle with ESD precautions to prevent damage.
Testing:
- Perform initial testing under controlled conditions to verify parameters such as V(BR)DSS, RDS(on), and gate charge.
- Regularly inspect for signs of wear or damage.
For detailed specifications and more comprehensive guidelines, refer to the official datasheet provided by STMicroelectronics.
(For reference only)Inquiry - STGW45HF60WD