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Specifications
SKU: 7321305
2SB779-R PNP transistors(BJT) -25V -500mA/-0.5A 150MHz 130~220 -200mV/-0.2V SOT-23/SC-59 marking IAR low-frequency output amplifier
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V(BR)CEO | - | - | 80 | V | Collector-Emitter breakdown voltage |
| Emitter-Collector Voltage | V(BR)ECS | - | - | 80 | V | Emitter-Collector breakdown voltage |
| Base-Emitter Voltage | V(BR)CES | - | - | 6 | V | Base-Emitter breakdown voltage |
| Collector Current | IC | - | 150 | 300 | mA | Continuous collector current |
| Total Power Dissipation | PD | - | - | 1000 | mW | Maximum power dissipation |
| Junction Temperature | Tj | -55 | - | 150 | °C | Operating junction temperature |
| Storage Temperature | Tstg | -55 | - | 150 | °C | Storage temperature range |
Instructions for Use:
Mounting and Handling:
- Ensure the transistor is handled with care to avoid damage.
- Mount the device in a way that it can dissipate heat effectively, especially when operating near its maximum power dissipation.
Biasing and Operation:
- Apply bias voltages within the specified limits to prevent damage.
- Keep the base-emitter voltage within safe limits to avoid forward-biasing the junction too heavily.
Thermal Considerations:
- Monitor the junction temperature to ensure it remains within operational limits.
- Use appropriate heatsinking if necessary, particularly in high-power applications.
Storage:
- Store the device in a dry environment within the specified storage temperature range to maintain reliability.
Electrostatic Discharge (ESD) Protection:
- Handle the device using ESD-safe procedures to prevent damage from static electricity.
For detailed application notes and more specific guidance, refer to the manufacturer's datasheet or technical support resources.
(For reference only)Inquiry - 2SB779-R
