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2SC3875S-GR

Specifications

SKU: 7321075

BUY 2SC3875S-GR https://www.utsource.net/itm/p/7321075.html
2SC3875S-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 100mV/0.1V SOT-23/SC-59 marking ALG generalswitch
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage Vceo IC = 0 - 80 V
Collector-Base Voltage Vcbo IB = 0 - 90 V
Emitter-Base Voltage Vebo IE = 0 -1.5 5.0 V
Collector Current Icm Tc = 25°C - 1.5 A
Continuous Collector Power Dissipation Ptot Ta = 25°C, Derated above 25°C - 0.625 W
Junction Temperature Tj Operating Range -55 150 °C
Storage Temperature Tstg -55 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SC3875S-GR with care to avoid mechanical damage.
    • Ensure proper heat sinking if operating near maximum power dissipation.
  2. Electrical Connections:

    • Connect the collector, base, and emitter terminals correctly to avoid damage.
    • Ensure that voltage and current ratings are not exceeded.
  3. Operating Environment:

    • Operate within specified temperature ranges to ensure reliable performance.
    • Avoid exposing the device to environments beyond its storage temperature limits.
  4. Derating:

    • For continuous operation, derate power dissipation linearly above 25°C ambient temperature.
  5. Testing:

    • Verify all connections and parameters before applying power.
    • Use appropriate test equipment and methods to prevent accidental damage.
  6. Storage:

    • Store in a dry environment within the specified storage temperature range.
    • Protect from electrostatic discharge (ESD) using suitable packaging.
(For reference only)

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