Share:
Specifications
SKU: 7299820
Trans MOSFET N-CH Si 100V 17.5A 3-Pin(2+Tab) CPT T/R
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source On-State Resistance | RDS(on) | - | 175 | - | mΩ @ VGS=10V, ID=20A | Resistance when the device is fully on. |
| Breakdown Voltage | BVdss | - | - | 100 | V | The maximum voltage that can be applied between drain and source with gate shorted to source. |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | 6 | V | Voltage at which the MOSFET starts conducting. |
| Continuous Drain Current | ID | - | - | 20 | A | Maximum continuous current through the drain. |
| Power Dissipation | PD | - | - | 230 | W | Maximum power dissipation at Tc = 25°C. |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum operating temperature of the junction. |
Instructions for Use:
Handling Precautions:
- Ensure proper ESD (Electrostatic Discharge) protection during handling.
- Avoid exceeding the absolute maximum ratings specified.
Mounting:
- Use appropriate thermal management techniques to ensure the junction temperature does not exceed 175°C.
- Ensure good electrical and thermal contact with heatsinks or PCBs.
Biasing:
- Apply a gate-source voltage (VGS) within the specified range to avoid damage and ensure reliable operation.
- Ensure VGS does not exceed ±20V to prevent gate oxide breakdown.
Current Handling:
- Do not exceed the continuous drain current rating (ID) to prevent overheating and potential damage.
- Consider derating in high ambient temperature conditions.
Storage:
- Store in a dry environment away from corrosive substances.
- Follow manufacturer guidelines for long-term storage.
For detailed application notes and further specifications, refer to the datasheet provided by the manufacturer.
(For reference only)Inquiry - RSD175N10TL
