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Specifications
SKU: 7275312
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA
| Parameter | Description | Value |
|---|---|---|
| Device Type | High-Speed CMOS SRAM | |
| Manufacturer | ISSI (Integrated Silicon Solution, Inc.) | |
| Part Number | IS43TR16256AL-125KBL | |
| Package Type | BGA | 88-Pin |
| Memory Density | 2 M x 8 bits | 16 Mb |
| Access Time (tAA) | Access time from Address to Data Valid | 12.5 ns |
| Cycle Time (tCYC) | Minimum Cycle Time | 12.5 ns |
| Supply Voltage (VCC) | Operating Supply Voltage | 2.5 V ± 0.2 V |
| Standby Current (ISB) | Supply Current in Standby Mode | 10 μA (typical) |
| Active Current (ICC) | Supply Current in Active Mode | 120 mA (typical) |
| Operating Temperature | Industrial Temperature Range | -40°C to +85°C |
| Data Retention | Data Retention at Maximum Junction Temperature | 10 years |
| Ordering Information | Suffix "-125KBL" indicates speed grade and package type |
Instructions for Use:
- Power-Up Sequence: Ensure that the supply voltage (VCC) is stable before applying any control signals or data inputs.
- Address Setup Time: Maintain the address setup time (tAS) of at least 2 ns before the falling edge of the clock signal.
- Signal Integrity: Keep signal integrity considerations in mind to avoid metastability issues. Ensure proper termination and trace lengths for high-speed operations.
- Thermal Management: Given the operational temperature range, ensure adequate cooling if used in environments approaching the upper limit.
- Handling Precautions: Handle the device with care to prevent electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during assembly and handling.
- Storage Conditions: Store the device in a controlled environment to prevent damage due to moisture or extreme temperatures.
For detailed specifications and additional information, refer to the official datasheet provided by ISSI.
(For reference only)Inquiry - IS43TR16256AL-125KBL
