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SKM195GB066D

Specifications

SKU: 7190714

BUY SKM195GB066D https://www.utsource.net/itm/p/7190714.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CES - - 650 V
Emitter-Collector Voltage V ECS - - 650 V
Collector Current (Continuous) I C - - 195 A Tc = 25°C
Collector Current (Pulsed) I CM - - 390 A Tc = 25°C, Pulse Width ≤ 1 ms
Power Dissipation (Collector) P C - - 1000 W Tc = 25°C
Junction Temperature T J - - 175 °C
Storage Temperature T STG -55 - 150 °C
Gate Charge Q G - 24.7 - nC V GE = ±15V, I C = 10A
Turn-On Time t on - 0.85 - μs V CC = 450V, I C = 10A, R G = 10Ω
Turn-Off Time t off - 1.45 - μs V CC = 450V, I C = 10A, R G = 10Ω

Instructions for Use:

  1. Mounting and Heat Sinks: Ensure proper heat dissipation by mounting the SKM195GB066D on a suitable heat sink to maintain operating temperatures within safe limits.

  2. Gate Drive Requirements: The gate requires a drive voltage of ±15V for optimal performance. Ensure the gate resistor is appropriately sized to control switching times and minimize losses.

  3. Overcurrent Protection: Implement overcurrent protection circuits to safeguard against excessive collector currents which can exceed rated values under fault conditions.

  4. Operating Environment: Keep the junction temperature below 175°C. Ensure adequate ventilation or cooling mechanisms are in place, especially in high ambient temperature environments.

  5. Storage Conditions: Store the device in a controlled environment where temperatures do not drop below -55°C or rise above 150°C to prevent damage.

  6. Handling Precautions: Handle with care to avoid damage to the leads and body. Follow anti-static precautions to prevent electrostatic discharge damage.

  7. Testing: When testing, ensure all parameters are within specified limits to avoid damaging the device. Use appropriate test equipment and methods as per industry standards.

(For reference only)

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