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Specifications
SKU: 6994264
62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Rated Collector Current | IC | - | 150 | - | A | Continuous collector current at Tc = 25°C |
| Collector-Emitter Voltage | VCES | - | 1200 | - | V | Maximum collector-emitter voltage |
| Gate-Emitter Voltage | VGE | - | ±20 | - | V | Maximum gate-emitter voltage |
| Power Dissipation | Ptot | - | 400 | - | W | Total power dissipation |
| Junction Temperature | Tj | -20 | - | 175 | °C | Operating junction temperature range |
| Storage Temperature | Tstg | -55 | - | 150 | °C | Storage temperature range |
| Thermal Resistance | Rth(j-c) | - | 0.5 | - | K/W | Junction to case thermal resistance |
Instructions for FF150R12KE3G:
Installation:
- Ensure that the device is mounted on a suitable heatsink to maintain proper operating temperatures.
- Follow recommended PCB layout guidelines for optimal performance and reliability.
Handling:
- Use appropriate ESD protection measures during handling and installation.
- Avoid mechanical stress on the leads and body of the device.
Operation:
- Do not exceed the maximum ratings provided in the parameter table.
- Ensure that the gate drive circuitry provides the correct voltage levels as specified.
- Operate within the specified temperature ranges to prevent damage or reduced performance.
Testing:
- Use caution when testing devices at high voltages; ensure all safety precautions are followed.
- Verify that the device operates correctly under typical operating conditions before deployment in final applications.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
(For reference only)Inquiry - FF150R12KE3G
