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29LV160TE-70PFTN

Specifications

SKU: 6940636

BUY 29LV160TE-70PFTN https://www.utsource.net/itm/p/6940636.html

Parameter Description Value
Device Type Serial Flash Memory 29LV160TE-70PFTN
Memory Density Total Memory Size 16 Mbit
Organization Data Organization 2,097,152 x 8 bits
Voltage - Supply (Vcc) Operating Supply Voltage Range 2.7 V to 3.6 V
Temperature (TJ) Junction Temperature Range -40°C to +85°C
Package Type Package Style TSSOP
Pin Count Number of Pins 20
Standards Compliance JEDEC Standards JESD21-C
Write Cycle Time Time Required for a Write Operation 5 ms
Programming Voltage Voltage Required for Programming Vpp = Vcc
Data Retention Minimum Duration Data is Retained 20 years
Erase Sectors Number of Erase Sectors 16 sectors
Sector Size Size of Each Erase Sector 64 Kbits
Endurance Maximum Number of Program/Erase Cycles per Block 100,000 cycles

Instructions

  1. Power-Up Sequence: Ensure the device is powered up with Vcc within the specified range before applying any signals.

  2. Initialization: After power-up, allow sufficient time for initialization before issuing commands.

  3. Command Execution: Use standard SPI commands for reading, writing, and erasing data. Refer to the command set table in the datasheet for specific opcode values.

  4. Write Protection: Utilize the write protection pin to prevent accidental writes or erases.

  5. Programming: Apply the programming voltage (Vpp) as required by the device specifications during write operations.

  6. Erase Operations: Perform sector or bulk erase operations using the appropriate commands. Verify after each erase operation to ensure successful completion.

  7. Data Integrity: Implement error checking mechanisms such as CRC for ensuring data integrity during read/write operations.

  8. Environmental Considerations: Operate the device within the specified temperature range to avoid damage and ensure reliable performance.

  9. Storage Conditions: When not in use, store the device in an environment that meets the long-term storage requirements to maintain data retention.

  10. Handling Precautions: Handle the device carefully to avoid electrostatic discharge (ESD) damage; follow ESD guidelines provided by the manufacturer.

(For reference only)

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