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Specifications
SKU: 6940527
| Parameter | Description | Value |
|---|---|---|
| Device | Flash Memory | M29W160EB-70N6 |
| Organization | Organization of the memory array | 2,097,152 words x 8-bit |
| Density | Total memory density | 16 Mbit |
| Voltage - Supply (Vcc) | Operating supply voltage range | 2.7 V to 3.6 V |
| Temperature (TJ) | Junction temperature range | -40°C to +85°C |
| Package | Type of package | TSSOP-32 |
| Speed - Max Clock Freq | Maximum clock frequency | 70 MHz |
| Programming Voltage | Voltage required for programming | Vpp = Vcc |
| Erase Block Size | Size of block that can be erased at once | 64 Kbytes |
| Write Cycle Time | Time required for a write cycle | 1 ms |
| Endurance | Number of program/erase cycles guaranteed | 100,000 cycles |
| Data Retention | Guaranteed data retention period | 20 years |
Instructions:
- Power Supply: Ensure the power supply voltage is within the specified range of 2.7 V to 3.6 V.
- Clock Frequency: Operate the device at a maximum clock frequency of 70 MHz.
- Programming: Use the same voltage for programming as the supply voltage (Vpp = Vcc).
- Block Erase: The device supports block erase operations with a block size of 64 Kbytes.
- Write Operations: Each write operation requires a cycle time of 1 ms.
- Operating Temperature: Keep the junction temperature within -40°C to +85°C for reliable operation.
- Endurance and Data Retention: The device guarantees up to 100,000 program/erase cycles and retains data for up to 20 years under proper conditions.
Inquiry - M29W160EB-70N6
