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MHW1815

Specifications

SKU: 6924880

BUY MHW1815 https://www.utsource.net/itm/p/6924880.html

Parameter Description
Part Number MHW1815
Type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration N-Channel Enhancement Mode
VDS (Max) 80V - Maximum Drain-to-Source Voltage
RDS(on) 4.2 mΩ @ VGS=10V - On-State Resistance
ID (Max) 90A - Continuous Drain Current at Tc = 25°C
PD (Max) 23W - Total Power Dissipation at Tc = 25°C
Package TO-220AB
**Operating Temp. -55°C to +175°C

Instructions for Use:

  1. Mounting: Ensure the MOSFET is mounted on a heatsink if operating near maximum current or power levels to maintain optimal temperature.
  2. Handling: Handle with care to avoid damage to the leads and body. Use appropriate ESD (Electrostatic Discharge) precautions.
  3. Soldering: Solder within recommended temperatures and times to prevent thermal damage. Typically, soldering should not exceed 260°C for more than 10 seconds.
  4. Circuit Design: Ensure that the gate voltage does not exceed the maximum rated value to prevent damage. The gate threshold voltage can vary; refer to the datasheet for specific device characteristics.
  5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)

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