Specifications
SKU: 6921469
Parameter | Description |
---|---|
Part Number | RA07M1317M |
Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
Configuration | N-Channel |
VDS (V) | 700 |
RDS(on) (Ω) | 0.17 at VGS=10V, ID=2A |
VGS(th) (V) | 2.5 to 4.5 |
ID (A) | 7 |
Package | TO-220 |
Operating Temp | -55°C to +150°C |
Mounting Style | Through Hole |
Instructions for Use:
- Handling Precautions: The RA07M1317M is an electrostatic sensitive device (ESD). Handle with care and use appropriate ESD precautions.
- Storage Conditions: Store in a dry environment away from direct sunlight and high temperatures.
- Installation: Ensure correct orientation during installation. Follow the pin configuration diagram provided in the datasheet.
- Heat Sinking: For applications where the MOSFET may operate at higher currents or temperatures, consider using a heat sink to maintain optimal performance and longevity.
- Circuit Design: Ensure that the gate drive voltage is within the specified limits to prevent damage to the device.
- Testing: Before final assembly, test the device parameters to ensure they meet the specifications provided.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
(For reference only)Inquiry - RA07M1317M