Specifications
SKU: 6793647
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Average Rectified Current | IF(AV) | Tj = 25°C | - | 20 | - | A |
Peak Forward Surge Current | IFSM | t = 8.3ms, sinewave | - | 100 | - | A |
Forward Voltage Drop | VF | IF = 20A, Tj = 25°C | - | 1.0 | - | V |
Reverse Recovery Time | trr | IF = 20A, di/dt = 200A/μs | - | 47 | - | ns |
Junction Capacitance | Cj | VR = 0V, f = 1MHz | - | 60 | - | pF |
Operating Junction Temperature | Tj | - | -55 | - | 175 | °C |
Instructions for Use:
- Mounting and Handling: Handle with care to avoid damage to the leads and body. Ensure proper alignment during mounting to prevent mechanical stress.
- Thermal Considerations: Ensure adequate heat sinking if operating near maximum current ratings to maintain junction temperature within specified limits.
- Surge Current Handling: The device can handle peak forward surge currents up to 100A for short durations (8.3ms sinewave). Ensure that transient conditions do not exceed these values.
- Reverse Recovery: Be aware of the reverse recovery time when using this diode in high-frequency applications to avoid potential issues with switching losses.
- Storage and Packaging: Store in a dry environment and follow recommended storage practices to prevent moisture damage.
- Electrostatic Discharge (ESD) Protection: Handle with appropriate ESD precautions to prevent damage from static electricity.
For detailed specifications and more specific application notes, refer to the manufacturer's datasheet or technical documentation.
(For reference only)Inquiry - MBR20100CTF-E1