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Specifications
SKU: 6793276
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(DS) | 200 | V | Maximum drain-to-source voltage | ||
| Gate-Source Voltage | V(GS) | -10 | 10 | V | Maximum gate-to-source voltage | |
| Continuous Drain Current | I(D) | 10 | A | Continuous drain current at Tc=25°C | ||
| Pulse Drain Current | I(D pul) | 35 | A | Pulse drain current | ||
| Power Dissipation | P(TOT) | 8.3 | W | Total power dissipation | ||
| Junction Temperature | T(j) | -55 | 150 | °C | Operating junction temperature | |
| Storage Temperature | T(stg) | -55 | 150 | °C | Storage temperature range |
Instructions:
- Installation: Ensure that the device is mounted on a suitable heatsink to dissipate heat effectively, especially under continuous operation.
- Handling: Use proper anti-static precautions when handling the FQPF10N20C to prevent damage from electrostatic discharge (ESD).
- Biasing: Apply gate voltages within the specified limits to avoid damaging the gate oxide layer.
- Current Limiting: Do not exceed the maximum continuous or pulse drain current ratings to prevent overheating and potential failure.
- Temperature Monitoring: Keep the junction temperature within the specified operating range. Monitor the temperature if operating in high ambient temperatures or with high power dissipation.
- Pulse Operation: For pulse applications, ensure that the pulse width and frequency do not cause the average power dissipation to exceed the rated value.
- Storage: Store the device in a dry, cool environment within the specified storage temperature range to maintain its integrity.
For detailed application notes and further information, refer to the manufacturer's datasheet.
(For reference only)Inquiry - FQPF10N20C
