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Specifications
SKU: 6793140
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source On Resistance | Rds(on) | Vgs = -10V, Id = -8A | 0.24 | 0.36 | Ω | |
| Gate-Source Threshold Voltage | Vgs(th) | Id = -1mA | -4.0 | -3.5 | -2.5 | V |
| Continuous Drain Current | Id | Tc = 25°C | -9.0 | A | ||
| Pulse Drain Current | Idp | Pulse width ≤ 300μs, Duty cycle ≤ 2% | -53 | A | ||
| Power Dissipation | Ptot | Ta = 25°C | 76 | W | ||
| Junction Temperature | Tj | -55 | 150 | °C | ||
| Storage Temperature | Tstg | -55 | 150 | °C |
Instructions for IRF9Z34NPBF:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
- Mounting: Ensure that the thermal resistance from the junction to ambient is minimized by using adequate heatsinking if necessary.
- Operating Voltage: Do not exceed the maximum ratings specified in the table to avoid damage to the device.
- Gate Drive: Apply a gate-source voltage (Vgs) within the recommended range to ensure reliable operation and prevent damage.
- Thermal Considerations: Monitor the junction temperature to stay within safe operating limits. Exceeding the maximum junction temperature can lead to premature failure.
- Pulse Operation: When operating in pulse mode, adhere to the specified pulse width and duty cycle limits to prevent overheating.
- Storage: Store in a dry environment within the specified storage temperature range to maintain device integrity.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
(For reference only)Inquiry - IRF9Z34NPBF
