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SGT60N60FD1PN TO-3P IGBT ORIGINAL STOCK
BUY SGT60N60FD1PN TO-3P IGBT ORIGINAL STOCK https://www.utsource.net/itm/p/12555236.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V CES | - | 600 | V | Maximum collector-emitter voltage | |
| Gate-Emitter Voltage | V GES | -15 | 15 | V | Maximum gate-emitter voltage | |
| Continuous Collector Current | I C | - | 60 | - | A | Continuous collector current at T C = 25°C |
| Pulse Collector Current | I CM | - | 360 | - | A | Non-repetitive peak pulse collector current |
| Power Dissipation | P D | - | 180 | W | Maximum power dissipation | |
| Junction Temperature | T J | -55 | 175 | °C | Operating junction temperature range | |
| Storage Temperature | T STG | -55 | 175 | °C | Storage temperature range |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid damage to the TO-3P package.
Electrical Connections:
- Connect the collector (C), emitter (E), and gate (G) terminals correctly.
- Ensure that the gate drive circuitry is designed to provide adequate drive current and voltage levels.
Operational Guidelines:
- Do not exceed the maximum ratings listed in the table to prevent device failure.
- Keep the junction temperature below the maximum limit by ensuring adequate cooling.
Storage and Environment:
- Store in a dry, cool place away from direct sunlight.
- Avoid exposure to corrosive environments.
Safety Precautions:
- Always follow safe handling practices when working with high voltages and currents.
- Use appropriate protective equipment during installation and operation.
For detailed application notes and further technical information, refer to the manufacturer’s datasheet or contact the supplier.
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