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IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR
Specifications
SKU: 12444946
Below is the parameter table and instructions for the IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR:
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | - | - | 150 | V | |
| Gate-to-Source Voltage | VGS | -15 | - | 20 | V | |
| Continuous Drain Current | ID | - | - | 33 | A | TC = 25°C |
| Pulsed Drain Current | ID(p) | - | - | 85 | A | tp = 10 ms, TC = 25°C |
| Power Dissipation | Ptot | - | - | 144 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction to Case | RθJC | - | - | 1.0 | °C/W | |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 62.5 | °C/W | No heatsink, still air |
| Input Capacitance | Ciss | - | 1040 | - | pF | VDS = 10 V, f = 1 MHz |
| Output Capacitance | Coss | - | 44 | - | pF | VDS = 10 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | VDS = 10 V, f = 1 MHz |
| Gate Charge | QG | - | 110 | - | nC | VGS = 10 V |
| Threshold Gate Voltage | VGS(th) | 1.5 | 2.5 | 4.0 | V | ID = 250 μA |
| On-State Resistance | RDS(on) | - | - | 0.033 | Ω | VGS = 10 V, ID = 33 A, TC = 25°C |
Instructions
Handling and Storage:
- Handle with care to avoid damage to the leads and body.
- Store in a dry, cool place to prevent moisture and corrosion.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use a thermal interface material (TIM) between the component and the heatsink to improve thermal conductivity.
Soldering:
- Preheat the PCB to reduce thermal shock.
- Use a soldering iron with a temperature setting appropriate for surface mount components (typically 300-350°C).
- Avoid excessive soldering time to prevent damage to the component.
Electrical Connections:
- Connect the gate and source pins carefully to avoid short circuits.
- Use a low-inductance layout to minimize parasitic inductance and improve switching performance.
Testing:
- Test the component under controlled conditions to ensure it meets the specified parameters.
- Use a suitable power supply and load to test the drain current and power dissipation.
Safety:
- Always follow proper safety guidelines when handling high-voltage and high-power components.
- Ensure that the circuit is properly insulated and grounded to prevent electrical hazards.
By following these instructions, you can ensure optimal performance and reliability of the IRFR4615TRLPBF N-CHANNEL MOSFET.
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