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Specifications
SKU: 12426387
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | 650 | V | Maximum voltage between collector and emitter with the gate open. |
| Gate-Emitter Voltage | VGE | -15 | - | 20 | V | Maximum voltage between gate and emitter. |
| Continuous Collector Current | IC | - | - | 1300 | A | Maximum continuous current through the collector. |
| Pulse Collector Current | IC(rms) | - | - | 1800 | A | Maximum pulse current through the collector (pulse width ≤ 10 μs). |
| Power Dissipation | PTOT | - | - | 2000 | W | Maximum total power dissipation at TC = 25°C. |
| Junction Temperature | TJ | -40 | - | 175 | °C | Operating junction temperature range. |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Storage temperature range. |
| Thermal Resistance, Junction to Case | RthJC | - | 0.15 | - | K/W | Thermal resistance from junction to case. |
| Turn-On Time | ton | - | 1.2 | 1.8 | μs | Time for the transistor to turn on. |
| Turn-Off Time | toff | - | 1.0 | 1.5 | μs | Time for the transistor to turn off. |
| Gate Charge | QG | - | 120 | 150 | nC | Total gate charge required to switch the transistor. |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within the specified range.
- Use a thermally conductive paste or pad between the device and the heatsink to improve heat transfer.
Gate Drive:
- Apply a gate-emitter voltage (VGE) within the specified range to ensure reliable switching.
- Use a gate resistor to control the rise and fall times of the gate signal, which helps in reducing switching losses and electromagnetic interference (EMI).
Overcurrent Protection:
- Implement overcurrent protection to prevent damage due to excessive collector current.
- Monitor the collector current and use a fast-acting fuse or current limiter if necessary.
Thermal Management:
- Regularly monitor the temperature of the heatsink and the device to ensure it stays within the operating temperature range.
- Consider forced air cooling or liquid cooling for high-power applications.
Storage and Handling:
- Store the device in a dry environment within the specified storage temperature range.
- Handle the device with care to avoid mechanical stress and static electricity, which can damage the sensitive components.
Testing:
- Before installing the device in a circuit, test its parameters using a suitable test setup to ensure it meets the specifications.
- Verify the functionality by measuring the collector-emitter voltage and current under different operating conditions.
By following these instructions, you can ensure optimal performance and longevity of the SKIIP13NAB065V1 transistor.
(For reference only)Inquiry - SKIIP13NAB065V1
