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Specifications
SKU: 12380903
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Rated Voltage | VDS | 1200 | V | Maximum Drain-to-Source Voltage |
| Rated Current | ID | 100 | A | Continuous Drain Current at TC = 25°C |
| Power Dissipation | Ptot | 1800 | W | Total Power Dissipation at TC = 25°C |
| Junction Temperature | TJ | -50 to +175 | °C | Operating Range |
| Storage Temperature | Tstg | -55 to +175 | °C | Storage Range |
| Gate Charge | QG | 130 | nC | Typical Value at VGS = ±15V, ID = 100A |
| Input Capacitance | Ciss | 10400 | pF | Typical Value at VDS = 600V, f = 1MHz |
| Output Capacitance | Coss | 290 | pF | Typical Value at VDS = 600V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 200 | pF | Typical Value at VDS = 600V, f = 1MHz |
| On-State Resistance | RDS(on) | 1.1 | mΩ | Typical Value at VGS = 15V, ID = 100A |
| Threshold Voltage | VGS(th) | 4.0 | V | Minimum Value at ID = 1mA |
| Maximum Gate-Source Voltage | VGS(max) | ±20 | V | Absolute Maximum Rating |
| Maximum Drain-Source Voltage (Repetitive) | VDSM | 1200 | V | Absolute Maximum Rating |
| Maximum Gate-Source Voltage (Repetitive) | VGSM | ±20 | V | Absolute Maximum Rating |
| Maximum Junction Temperature | TJ(max) | 175 | °C | Absolute Maximum Rating |
| Thermal Resistance (Junction to Case) | Rth(j-c) | 0.15 | K/W | Typical Value |
| Thermal Resistance (Junction to Ambient) | Rth(j-a) | 0.8 | K/W | Typical Value |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage thermal resistance and keep the junction temperature within safe limits.
- Handle the device with care to avoid damage to the pins and the silicon die.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate wire gauges and connectors to handle the rated current and voltage.
Biasing and Drive:
- Apply the correct gate-source voltage (VGS) to ensure proper turn-on and turn-off.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature to prevent overheating.
- Use a heatsink or cooling solution to dissipate heat effectively.
Overvoltage Protection:
- Implement overvoltage protection circuits to safeguard against voltage spikes and transients.
Storage:
- Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
Testing:
- Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into the final application.
Inquiry - FP100R12KT4
