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HY3215P 150V120A REPLACEABLE IRFB4115 FDP2532 FDP083N15A

Specifications

SKU: 11773368

BUY HY3215P 150V120A REPLACEABLE IRFB4115 FDP2532 FDP083N15A https://www.utsource.net/itm/p/11773368.html
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Parameter Value Unit
Part Number HY3215P
Type MOSFET
Voltage Rating (Vds) 150 V
Current Rating (Id) 120 A
Package TO-247
Replacement Options IRFB4115, FDP2532, FDP083N15A
Max Drain-Source Voltage (Vds(max)) 150 V
Max Continuous Drain Current (Id(max)) 120 A
Max Gate-Source Voltage (Vgs(max)) ±20 V
Max Power Dissipation (Pd(max)) 200 W
Rds(on) @ 10V Vgs 3.5 mΩ
Total Gate Charge (Qg) 110 nC
Input Capacitance (Ciss) 3500 pF
Output Capacitance (Coss) 900 pF
Operating Temperature Range (Tj) -55 to 150 °C

Instructions for Use:

  1. Handling Precautions:

    • ESD Protection: Handle the MOSFET with care to avoid electrostatic discharge (ESD). Use ESD-safe tools and work surfaces.
    • Heat Sinking: Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within the specified range.
  2. Mounting:

    • Torque Specifications: Follow the recommended torque values for the screws to secure the MOSFET to the heatsink or PCB.
    • Thermal Interface Material (TIM): Apply a thin, even layer of thermal paste between the MOSFET and the heatsink to improve thermal conductivity.
  3. Electrical Connections:

    • Gate Drive: Use a gate driver circuit to ensure the gate voltage is within the specified range (±20V).
    • Source Connection: Ensure a low-inductance path for the source connection to minimize parasitic inductance effects.
    • Drain Connection: Use wide, short traces for the drain connection to handle high currents efficiently.
  4. Testing:

    • Initial Testing: Before applying full load, perform initial testing with a low current to verify correct operation and thermal performance.
    • Thermal Monitoring: Monitor the temperature of the MOSFET during operation to ensure it does not exceed the maximum operating temperature.
  5. Storage:

    • Humidity Control: Store the MOSFET in a dry environment to prevent moisture damage.
    • Static Protection: Keep the MOSFET in its original packaging or in an ESD-protected bag when not in use.

By following these guidelines, you can ensure reliable and efficient operation of the HY3215P MOSFET.

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