BUY G60N100BN https://www.utsource.net/itm/p/11729777.html

Description: The G60N100BN is an N-channel enhancement mode power MOSFET transistor manufactured by ON Semiconductor. Features: - Maximum Drain Source Voltage (Vdss): 600V - Maximum Drain Current (Id): 100A - Rds(on): 0.0045 Ohm - Maximum Power Dissipation (Pd): 590W - Maximum Operating Temperature (Tj): 150°C Applications: - Switching applications - Motor control - Power management - Power conversion - Lighting control (For reference only)