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Specifications
SKU: 8809462
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum Drain-to-Source Voltage | VDS(max) | 60 | V | - |
| Maximum Gate-to-Source Voltage | VGS(max) | ±20 | V | - |
| Continuous Drain Current | ID | 10 | A | TC = 25°C |
| Pulse Drain Current | IDpeak | 40 | A | TC = 25°C, tp = 10 μs, Duty Cycle = 1% |
| Total Power Dissipation | PTOT | 100 | W | TC = 25°C |
| Junction Temperature Range | TJ | -55 to 150 | °C | - |
| Storage Temperature Range | TSTG | -55 to 150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | 1.5 | °C/W | - |
| Gate Charge | QG | 35 | nC | VGS = 10V, ID = 10A |
| Input Capacitance | Ciss | 1800 | pF | VDS = 15V, f = 1 MHz |
| Output Capacitance | Coss | 270 | pF | VDS = 15V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 450 | pF | VDS = 15V, f = 1 MHz |
| On-State Resistance | RDS(on) | 0.06 | Ω | VGS = 10V, ID = 10A |
| Turn-On Delay Time | td(on) | 12 | ns | VGS = 10V, ID = 10A |
| Rise Time | tr | 28 | ns | VGS = 10V, ID = 10A |
| Turn-Off Delay Time | td(off) | 18 | ns | VGS = 10V, ID = 10A |
| Fall Time | tf | 35 | ns | VGS = 10V, ID = 10A |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid damage to the leads and body.
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
Electrical Connections:
- Connect the drain (D), gate (G), and source (S) terminals correctly.
- Use short, low-inductance connections to minimize parasitic effects.
Biasing:
- Apply the appropriate gate-to-source voltage (VGS) to control the device.
- Ensure that the gate voltage does not exceed the maximum ratings.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature below 150°C.
- Use thermal paste or thermal interface materials between the device and the heat sink for better thermal conductivity.
Operational Limits:
- Do not exceed the maximum drain-to-source voltage (VDS(max)).
- Stay within the continuous and pulse drain current limits.
- Avoid operating the device outside its specified temperature range.
Testing and Troubleshooting:
- Use a high-impedance voltmeter to measure gate and drain voltages.
- Check for proper connection and thermal management if the device overheats.
- Verify the on-state resistance (RDS(on)) to ensure the device is functioning correctly.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Keep the device in its original packaging until ready for use.
Inquiry - FP10R06W1E3
