MG15N6ES42

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TRANSISTOR 15 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG15N6ES42 is a 15A, 600V, N-channel IGBT module manufactured by Toshiba America Electronic Components. Features: Low saturation voltage Low gate charge High speed switching High current capability High reliability Application: The MG15N6ES42 is suitable for applications such as motor control, power supplies, and other power switching applications. (For reference only)