BUY 2DI150M-120 https://www.utsource.net/itm/p/1569488.html
Power Transistor Module
2DI150M-120 is a module manufactured by Fuji Electric. It is a high power insulated gate bipolar transistor (IGBT) module. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 150A. It is suitable for use in a wide range of applications, including motor control, UPS, welding, solar energy, and other power conversion applications. It features a high-speed switching capability, low loss, and high reliability. (For reference only)